PART |
Description |
Maker |
MIE-114A2 |
GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-524A4 |
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-111A1 |
AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓大功率角度看包装红外发光二极管
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
AS185-92 |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC GHz
|
Alpha Industries, Inc. Alpha Industries Inc
|
TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package 砷化红外发光二极管的GaAIAs呢?3毫米(T.1)包 GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package From old datasheet system GaAs/GaAlAs IR Emitting Diode in ? 3 mm (T?1)Package GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package GaAs/GaAlAs IR Emitting Diode in 庐3 mm (T.1) Package GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix] Vishay Telefunken
|
FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu, Ltd. Fujitsu Limited
|
AMMP-6222 AMMP-6222-BLKG AMMP-6222-TR1G AMMP-6222- |
7 to 21 GHz GaAs High Linearity LNA in SMT Package
|
http:// AVAGO TECHNOLOGIES LIMITED
|
FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET L-Band Medium & High Power GaAs FET
|
FUJITSU LTD EUDYNA[Eudyna Devices Inc]
|
FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Sumitomo Electric Industries, Ltd.
|
APT5010B2VR APT5010B2VRG |
POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. New T-MAX?Package (Clip-mounted TO-247 Package)
|
ADPOW[Advanced Power Technology] Advanced Power Technolo...
|
TC1401N |
0.5 W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|