| PART |
Description |
Maker |
| CEN-U10 |
NPN SILICON POWER TRANSISTOR 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| MJE585006 MJE5850G MJE5852G MJE5850 MJE5851 MJE585 |
8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS 8 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
ONSEMI[ON Semiconductor]
|
| 2SC3503 2SC3503CSTU 2SC3503DSTU 2SC3503ESTU 2SC350 |
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| F12C40 F12C60 F12C30 F12C50 |
POWER RECTIFIERS(12A,300-600V) 大功率整流器（第12A ,300 - 600V的）
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| 2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368
FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
ISAHAYA[Isahaya Electronics Corporation]
|
| KRC886T KRC881T KRC882T KRC883T KRC884T KRC885T KR |
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
(KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR
300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
