PART |
Description |
Maker |
MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆
|
ON Semiconductor Motorola, Inc Motorola Mobility Holdings, Inc.
|
MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM From old datasheet system
|
ON Semiconductor ETC Motorola, Inc
|
MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MMDF5N02Z |
DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MMDF3200Z |
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MMDF7N02Z MMDF7N02Z_D ON2201 ON2200 |
DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS Medium Power Surface Mount Products From old datasheet system
|
Motorola, Inc ON Semi
|
MMDF3N06HD ON2184 ON2183 |
DUAL TMOS POWER MOSFET 60 VOLTS From old datasheet system
|
MOTOROLA[Motorola, Inc]
|