| PART |
Description |
Maker |
| GHB-0805DU-Y GHB-0805DU-O GHB-0805DU-R GHB-0805DU- |
These chip-type LEDs utilize Aluminum Indium Gallium Phosphide (AlInGaP) material technology. 这些芯片型LED的利用铝铟镓磷化物（磷化铝铟镓）材料技术
|
International Light Technologies, Inc.
International Light Technologies Inc.
GILWAY[Gilway Technical Lamp]
|
| CHV2707-QJ CHV2707-QJ-0G0T CHV2707-QJ-0G00 PB-CHV2 |
700 to 800 MHz InGaP HBT 5W Linear Power Amplifier 70000兆赫的InGaP HBT 5W线性功率放大器
|
Mimix Broadband, Inc.
|
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| PB-CGB7009-SC-0000 PB-CGB7009-SP-0000 |
DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 直流6.0千兆赫的InGaP HBT，MMIC的或包装，匹配增益模块放大器
|
Mimix Broadband, Inc.
|
| MGRB1018_D ON1882 MGRB1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGR2025CT MGR2025CT_D ON1881 |
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS
Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| DGSS10-06CC |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS, Corp.
|
| GN01010 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01021 |
Gallium Arsenide Devices
|
Panasonic
|
| 3SK0241 |
Gallium Arsenide Devices
|
Panasonic
|
