| PART |
Description |
Maker |
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| BUT30V03 BUT32V03 WM872104 BUT30V_03 BUT30V |
NPN TRANSISTOR POWER MODULE
Internet Audio DAC with Integrated Headphone Driver
NPN TRANSISTOR POWER MODULE
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
WOLFSON
|
| KE524575HB KD621K20HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 75A I(C)
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 850V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 850V五（巴西）总裁| 200安培我（丙）
|
CERAMATE TECHNOLOGY CO., Ltd.
|
| BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五（巴西）国际消费电子展| 150A一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| KD224575 |
Dual Darlington Transistor Module (75 Amperes/600 Volts) 75 A, 450 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| 2DI150Z-100 |
Power transistor module for high power switching, AC and DC motor control applications
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 1DI200Z-120 |
Power transistor module for power switching, AC and DC motor controls
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| ETK81-050 |
POWER TRANSISTOR MODULE
|
FUJI ELECTRIC CO LTD
|
| 6DI30A-120 |
POWER TRANSISTOR MODULE
|
Fuji Electric
|
