| PART |
Description |
Maker |
| FX5545G005 |
Industry Smallest and Low Profile 5W 1.5A DC/DC Buck Converter with High Output Density Power
|
Vishay
|
| FX5545G201 |
Industry Smallest and Low Profile 3W 1000mA DC/DC Buck Converter with High Output Density Power
|
Vishay
|
| FX5545G005ADJT2E2 FX5545G0054V5B5 FX5545G0054V5B5E |
APL8,RV2.2.1,1.15V,105C
SLOW MODE 8BIT MCU 业界最小的超薄5W 1.5A直流/直流降压转换器的高输出功率密
Industry Smallest and Low Profile 5W 1.5A DC/DC Buck Converter with High Output Power Density 业界最小的超薄5W 1.5A直流/直流降压转换器的高输出功率密
9S12C128 TSMC3 GENERAL
Plug-In Relay; Contacts:4PDT; Coil Voltage AC Max:120V; Contact Carry Current:120A; Coil Resistance:8000ohm; Relay Terminals:Solder Lug; Relay Mounting:Plug-In; Contact Carrying Power:0.45W; Switch Function:4PDT
Industry Smallest and Low Profile 5W 1.5A DC/DC Buck Converter with High Output Power Density
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 |
2.5V In-System Programmable SuperFAST?High Density PLD
2.5V In-System Programmable SuperFAST?/a> High Density PLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI |
3.3V In-System Programmable SuperFAST?/a> High Density PLD
CRYSTAL 24.0 MHZ 20PF SMD
3.3V In-System Programmable SuperFASTHigh Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| ISPLSI2192VE-135LT128 ISPLSI2192VE-180-L-T128 ISPL |
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
RELAY SSR 110A 240VAC AC INPUT
3.3V In-System Programmable SuperFASTHigh Density PLD
|
LATTICE[Lattice Semiconductor]
LatticeSemiconductor
Lattice Semiconductor Corporation
|
| ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
In-System Programmable High Density PLD
100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| DR127-100-R DR127-150-R DR127-101-R DR127-102-R DR |
High power density, high efficiency, shielded inductors
|
List of Unclassifed Man...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| STP80N06-1 STP80N06-10 4888 |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| ISPLSI2032VL ISPLSI2032VL-110LB49 ISPLSI2032VL-110 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP48
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQCC44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQFP44
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
