| PART |
Description |
Maker |
| MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF5P21180 MRF5P21180R6 |
MRF5P21180 2170 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
|
| MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S21150SR3 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 Mhz, 33 W Avg., 2 X W-CDMA, 28 V Lateral N-channel RF Power MOSFETs
|
MOTOROLA
|
| MRF5S21130R3 MRF5S21130SR3 |
2170 MHz, 28 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| BLD6G22L-50 BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors
|
| MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 |
MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 MHz, 18 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MHPA21010 |
MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier
|
Motorola
|
| PTF210101M |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTF211802A PTF211802E PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz
LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
http://
INFINEON[Infineon Technologies AG]
|
| PTAC210802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
