| PART |
Description |
Maker |
| MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| MRF5P21240 |
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel Broadband RF Power MOSFET
|
Motorola
|
| MRF5P21180 MRF5P21180R6 |
MRF5P21180 2170 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
|
| MRF5P21180 |
2170 MHz, 180 W AVG., 2 x W?CDMA, 28 V Lateral N?Channel RF Power MOSFET
From old datasheet system
|
Motorola
|
| MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MHL21336 |
MHL21336 2110-2170 MHz, 3 W, 31 dB RF Linear LDMOS Amplifier
|
Motorola
|
| SM2122-52LD |
2110-2170 MHz 160 Watt Peak Power Amplifier
|
Stealth Microwave, Inc.
|
| PTF210901 PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTF210101M |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
|
