| PART |
Description |
Maker |
| MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| UPD23C64000JLGX-XXX UPD23C64000JLGY-XXX-MJH UPD23C |
64M-bit (8M-wordx8-bit/4M-wordx16-bit) Mask ROM
|
NEC
|
| MB82DP04184E-65LTBG MB82DP04184E-65L |
64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Media Devices Limited
|
| MX23C6422 23C6422 |
64M-BIT MASK ROM (16/32 BIT OUTPUT)
From old datasheet system
|
Macronix 旺宏
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
| UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 |
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 6400位CMOS移动指明内存分词6位温度范
|
NEC Corp.
PerkinElmer, Inc.
|
| K9F1208U0A-P K9F1216D0A K9F1216D0A-P K9F1216D0A-Y |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F1208U0A K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| MC-4R64CPE6C-653 MC-4R64CPE6C-745 MC-4R64CPE6C MC- |
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 16-BIT)
Direct Rambus?/a> DRAM RIMM?/a> Module 64M-BYTE (32M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 64M-BYTE (32M-WORD x 16-BIT)
|
http://
Elpida Memory
|
| K9K1208U0C K9K1208Q0C K9K1216D0C K9K1216Q0C K9K121 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
