| PART |
Description |
Maker |
| NESG2107M33-T3-A NESG2107M33 NESG2107M33-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE687M13-T3-A NE687M13 NE687M13-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE681M03-T1-A NE681M03-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE68019-T1 NE68000 NE68030-T1 NE68035 NE68033-T1B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR 邻舍NPN硅高频晶体管
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE681M03-T1-A |
BREADBOARD COPPER CLAD 11.5X17,1
NECs NPN SILICON TRANSISTOR
|
Duracell
California Eastern Laboratories
California Eastern Labs
|
| NE677M04 NE677M04-T2 |
NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR 邻舍中功率NPN硅高频晶体管
From old datasheet system
|
NIC Components, Corp.
Electronic Theatre Controls, Inc.
California Eastern Laboratories
|
| NE85600 NE85639R NE856 NE85618 NE85619 NE85630 NE8 |
NPN silicon high frequency transistor.
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC[NEC]
|
| NE46134-T1-AZ |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
California Eastern Laboratories
|
| NESG250134-T1-AZ NESG250134 NESG250134-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)
|
CEL[California Eastern Labs]
|
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| NESG250134-AZ NESG250134-EV09 NESG250134-T1-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE) 邻舍npn型硅锗射频晶体管介质输出功率AMPLIFIVATION00mW的）3针奥尔MINIMOLD34包）
|
Duracell
California Eastern Laboratories, Inc.
|
| 2SD1592 2SD1592L |
Silicon transistor
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 5A I(C) | SOT-186
|
NEC Corp.
|
