PART |
Description |
Maker |
AT45DB041B-SC-2.5 AT45DB041B-TC-2.5 AT45DB041B-TI |
MOSFET N-CH 200V 105A ISOPLUS247 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash 4M X 1 FLASH 2.7V PROM, PDSO28 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash 4M X 1 FLASH 2.7V PROM, PDSO8
|
Atmel Corp. ATMEL Corporation Atmel, Corp.
|
NTD2406.1 NTD2406.1G NTD24061 NTD24061G NTD24N06G |
Power MOSFET 60 Volt, 24 Amp N?Channel DPAK
|
ON Semiconductor
|
SFF70N10C |
70 AMP 600 VOLT 0.030 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
SFF70N10Z SFF70N10M |
70 AMP 600 VOLT 0.030 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
CDLL4620 CDLL4614 CDLL4615 CDLL4616 CDLL4617 CDLL4 |
4.3 volt zener diode 3.3 volt zener diode 5.1 volt zener diode 3.9 volt zener diode 2.4 volt zener diode LEADLESS PACKAGE FOR SURFACE MOUNT 2-of-3 Decoder/Demultiplexer 8-US8 -40 to 85 2-of-3 Decoder/Demultiplexer 8-SM8 -40 to 85 2-of-3 Decoder/Demultiplexer 8-DSBGA -40 to 85 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 4.7 volt zener diode 5.6 volt zener diode 2.2 volt zener diode 3.6 volt zener diode 2.0 volt zener diode
|
Compensated Devices Incorporated CDI-DIODE[Compensated Deuices Incorporated]
|
MRF9060 MRF9060R1 MRF9060S MRF9060SR1 |
4 MEGABIT 3.3 VOLT SERIAL CONFIGURATION UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
飞思卡尔半导体(中国)有限公司 Motorola, Inc. Advanced Semiconductor MOTOROLA[Motorola, Inc]
|
AMD29F010B AM29F010B-90PI AMD29F010B-45EE AMD29F01 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory 20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; A IRLML2402 with Tape and Reel Packaging 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位28亩8位)的CMOS 5.0伏只,统一部门快闪记忆 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位128亩8位)的CMOS 5.0伏只,统一部门快闪记忆
|
Advanced Micro Devices, Inc.
|
FDS6673AZ |
30 Volt P-Channel PowerTrench MOSFET 14500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
|
IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 175°C Operating Temperature
|
International Rectifier
|
IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET HEXFET? Power MOSFET 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Advanced Process Technology
|
International Rectifier
|
AT29BV040A AT29BV040A-20TC AT29BV040A-20TI AT29BV0 |
4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory 4M bit, 2.7-Volt Read and 2.7-Volt Write Flash
|
ATMEL[ATMEL Corporation]
|
FDZ208P |
P-Channel 30 Volt PowerTrench BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|