PART |
Description |
Maker |
MMC4025 MMC4001 MMC4002 MMC4000 |
Quad 2-input NOR gate Dual 4-input NOR gate Dual 3-input NOR gate plus inverter Triple 3-input NOR gate NOR GATES COMPLEMENTARY MOS INTEGRATED CIRCUITS
|
Microelectronica Micro Electronics
|
3SK134B 3SK134B-T1 3SK134B-VM 3SK134B-T2 |
Dual-gate MOS FET RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
|
NEC
|
TC58DVM92A1FT00 TC58DVM92A1FT |
Flash - NAND MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
3SK51 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
3SK103 |
Silicon N-Channel Dual Gate MOS FET
|
ETC
|
BF998 BF998R |
Silicon N-channel dual-gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
BDX33B BDX34C BDX34B ON0204 BDX33C |
From old datasheet system 10 AMPERE COMPLEMENTARY Darlington Complementary Silicon Power Transistors
|
Motorola Inc ON Semiconductor Motorola, Inc
|
TC58FVM6B2A TC58FVM6T2A TC58FVM6B2ATG-65 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
MJH11018 MJH11019 MJH11020 MJH11021 MJH11022 MJH11 |
From old datasheet system 15 AMPERE DARLINGTON COMPLEMENTARY SILICON DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
ONSEMI[ON Semiconductor]
|
TC55NEM208AFTN70 TC55NEM208A TC55NEM208AFPN TC55NE |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|