| PART |
Description |
Maker |
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| 2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
|
| FZT968 |
SOT223 PNP SILICON PLANAR HIGH CURRENT
PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR
|
Diodes Incorporated
Zetex Semiconductors
|
| Q62702-D930 BD487 BD488 Q62702-D929 Q62702-C825 SI |
PNP SILICON PLANAR TRANSISTORS
NPN Silicon Darlington Transistor (High current gain High collector current)
ECONOLINE: RI - Custom Solutions Available- 1kVDC Isolation- No Extern. Components Required- UL94V-0 Package Material- No Heatsink Required- Efficiency to 87%
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 0873811464 87381-1464 |
2.00mm (.079) Pitch Milli-Grid Receptacle, Surface Mount, Top Entry, 0.38μm (15μ)Gold (Au) Plating, with Cap, without Locating Pegs, 14 Circuits, Lead-free
2.00mm (.079") Pitch Milli-Grid垄芒 Receptacle, Surface Mount, Top Entry, 0.38楼矛m (15楼矛")Gold (Au) Plating, with Cap, without Locating Pegs, 14 Circuits, Lead-fre
|
Molex Electronics Ltd.
|
| MC34982PNA MC33982 MC33982PNA MC33982PNA/R2 |
Single Intelligent High-Current Self-Protected Silicon High-Side Switch 单智能大电流的自我保护硅高边开
Single Intelligent High-Current Self-Protected Silicon High-Side Switch (2.0 mOhm)(单智能大电流带自保护功能的硅高端开关（2mOhm
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
飞思卡尔半导体(中国)有限公司
|
| BC847PN Q62702-C2374 BC847PNQ62702C2374 Q62702-C15 |
PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
TRANSISTOR SOT363
NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HFM306 HFM308 HFM301 HFM305 |
SMD, High Efficient Rectifier, 600V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 1000V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 50V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 400V, 3A, Silicon Diode
|
Rectron Semiconductor
|
| RUR-D820 RUR-D815 RUR-D810 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 200 V.
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 150 V.
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 100 V.
|
General Electric Solid State
|
| R1800 R2000 R1200 R1500 R12.0 R18.0 R150. |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts 0.5 A, 1800 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Compon...
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
MCC[Micro Commercial Components]
|
