| PART |
Description |
Maker |
| NX7313UA-AZ NX7313UA |
NECs 1310 nm InGaAsP MQW FP TOSA FOR GIGABIT ETHERNET APPLICATION
|
CEL[California Eastern Labs]
|
| NX5312 NX5312EH-AZ NX5312EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS
|
California Eastern Labs
|
| NX7315UA-AZ |
NECs 1310 nm InGaAsP MQW FP TOSA FOR 2.5 Gb/s INTRA-OFFICE APPLICATION 邻舍1310纳米InGaAsP多量子阱计划生育TOSA.5千兆/ s的内部办公应
|
California Eastern Laboratories, Inc.
|
| NX7327BF-AA-AZ NX7327BF-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (110 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7328BF-AA-AZ NX7328BF-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (70mW MIN)
|
CEL[California Eastern Labs]
|
| NX7312UA NX7312UA-AZ |
NECs 1310 nm InGaAsP MQW FP TOSA FOR SHORT HAUL 155 Mb/s and 622 Mb/s APPLICATIONS 邻舍1310纳米InGaAsP多量子阱计划生育短55 Mb / s22 MB的TOSA s应用
|
California Eastern Laboratories, Inc.
|
| NX7361JB-BC NX7361JB-BC-AZ |
NECs 1310 nm InGaAsP MQW FP PULSD LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN) 邻舍1310纳米计划生育PULSD InGaAsP多量子阱激光二极管应用浸时域反射计50毫瓦最小包装）
|
California Eastern Laboratories, Inc.
|
| NX8510UD-AZ NX8510UD |
NECs InGaAsP MQW-DFB TOSA FOR 2.5 Gb/s CWDM APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX6508 |
NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
|
California Eastern Laboratories
|
| NX8504CE-CC NX8504BE-CC |
NECs 1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION
|
CEL[California Eastern Labs]
|
| NX8503CG-CC NX8503BG-CC NX8503CG NX8503BG |
TVS BIDIRECT 1500W 14V SMC
NECs 1550 nm InGaAsP MQW DFB LASER DIODE
|
NEC Corp.
NEC[NEC]
http://
|
| NX7529BB-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (20 mW MIN)
|
http://
California Eastern Laboratories
|
