| PART |
Description |
Maker |
| PAK-II |
310 Ivy Glen Court
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| VPP16-310 |
VPP16-310
|
TRIAD MAGNETICS
|
| RO2053 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
| 6316 |
Two WE-310 Plugs To RJ45 / RJ48
|
Pomona Electronics
|
| SR5408 |
310.00 MHz One Port SAW Resonator
|
Vanlong Technology Co., Ltd.
|
| LR38574 |
Timing Generator IC for 1 090 k/1 310 k-pixel CCDs
|
Sharp Corporation
Sharp Electrionic Components
|
| 2N7002PT115 2N7002PT |
60 V, 310 mA N-channel Trench MOSFET
Logic-level compatible
|
NXP Semiconductors N.V.
|
| NX5322EH NX5322EK NX5322 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
NEC
|
| 2N7002E11 2N7002ET1G 2N7002ET3G |
Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23
Small Signal MOSFET 60 V, 310 mA, TRENCH, N-Channel 260 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Small Signal MOSFET
|
ON Semiconductor
|
| NX5320EH-AZ |
1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION
|
California Eastern Labs
|
| LZ23J3V LR36685 |
1/2.7-type Interline Color CCD Area Sensor with 1 310 k Pixels
|
SHARP[Sharp Electrionic Components]
|
| NX6308GH NX6308GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
