| PART |
Description |
Maker |
| PD100F12 |
FRD MODULE - 100A/1200V/trr:250nsec
|
Nihon Inter Electronics Corporation
|
| PH270F2 |
FRD MODULE 270A/200V/trr:150nsec
|
NIEC[Nihon Inter Electronics Corporation]
ETC[ETC]
|
| FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| P2H30F6 |
FRD MODULE 30A/600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| P2H60F6 |
FRD MODULE 60A/600V
|
Nihon Inter Electronics...
NIEC[Nihon Inter Electronics Corporation]
|
| 15KRA60 |
FRD - 1.5A 600V 160ns
|
NIEC[Nihon Inter Electronics Corporation]
|
| X40030S14-A X40030S14-B X40031S14-A X40031S14-B X4 |
THYRISTOR/DIODE MODULE, 50A 1400VTHYRISTOR/DIODE MODULE, 50A 1400V; Voltage, Vrrm:1400V; Current, It av:50A; Case style:SEMIPACK 1; Current, It rms:95A; Current, Itsm:1500A; Voltage, Vgt:3V; Current, Igt:150mA; Centres, fixing:80mm;
Triple Voltage Monitor with Intergrated CPU Supervisor
|
Intersil Corporation
|
| STGW50NB60H 6705 |
N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT
From old datasheet system
N-CHANNEL 50A - 600V TO-247 PowerMESH TM IGBT
N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| 1N5399S 1N5391 1N5391_1 1N5391S 1N5392 1N5392S 1N5 |
RECTIFIER STANDARD SINGLE 1.5A 200V 200 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
RECTIFIER STANDARD SINGLE 1.5A 100V 100 50A-ifsm 5uA-ir 1.1V-vf DO-15 1K/BULK
RECTIFIER STANDARD SINGLE 1.5A 600V 600 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
RECTIFIER STANDARD SINGLE 1.5A 50V 50 50A-ifsm 5uA-ir 1.1V-vf DO-41 5K/AMMO 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-41
RECTIFIER STANDARD SINGLE 1.5A 800V 800 50A-ifsm 5uA-ir 1.1V-vf DO-41 5K/AMMO 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-41
1.5A RECTIFIER
|
Diodes, Inc.
DIODES[Diodes Incorporated]
|
| STGE50NB60HD 6704 |
N-CHANNEL 50A - 600V ISOTOP PowerMESH TM IGBT
From old datasheet system
N-CHANNEL 50A - 600V ISOTOP PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
|
