| PART |
Description |
Maker |
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| PF0310A |
MOS FET Power Amplifier Module for VHF Band
|
HITACHI[Hitachi Semiconductor]
|
| PF0342A PF0345A PF0341A PF0343A PF0344A |
MOS FET POWER AMPLIFIER MODULE FOR UHF BAND
|
HITACHI[Hitachi Semiconductor]
|
| PF01410 PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| M68742 68742 |
SILICON MOS FET POWER AMPLIFIER / 903-905MHz / 1.8W / FM PORTABLE RADIO
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 903-905MHz, 1.8W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PF08103B |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| PF08127B E2081606PF08127B E2081606_PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
|
ETC[ETC]
RENESAS[Renesas Electronics Corporation]
|
| M67799LA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7.5W, FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER 400-430MHz 7.5W FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| E2081606PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone 场效应晶体管功率放大器模块，电子GSM和DCS1800/1900三频手持电话
|
Renesas Electronics, Corp.
|
