| PART |
Description |
Maker |
| M68732LA 68732LA |
400 MHz - 450 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
From old datasheet system
Silicon MOS FET Power Amplifier, 400-450MHz 7W FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 400-450MHz, 7W, FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-450 MHz 7W FM PORTABLE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PF08122B |
MOS FET Power Amplifier Module
|
Renesas
|
| PF0340A |
MOS FET Power Amplifier Module
|
HITACHI[Hitachi Semiconductor]
|
| PF01410 PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| PF01411B |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| M68731H 68731H |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER 150-175MHz 7W FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER / 150-175MHz / 7W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF0415 PF0415A |
MOS FET Power Amplifier Module for PCS 1900 Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| M68732UL 68732UL |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 380-400MHz, 7W, FM PORTABLE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF08127B E2081606PF08127B E2081606_PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
|
ETC[ETC]
RENESAS[Renesas Electronics Corporation]
|
| MP4403 |
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
