| PART |
Description |
Maker |
| PHW11N50E PHB11N50E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHW14N50E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHU2N50E |
PowerMOS transistors Avalanche energy rated
|
Philips Semiconductors
NXP Semiconductors
|
| PHP3N60E PHB3N60E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHP4ND40E PHB4ND40E |
PowerMOS transistors FREDFET, Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHP6N60E PHB6N60E |
PowerMOS transistors Avalanche energy rated 5.4 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHD2N60E PHP2N60E PHB2N60E |
PowerMOS transistors Avalanche energy rated 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHW9N60E PHB9N60E PHP9N60E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| IRFAE40 IRFAE40-15 |
Simple Drive Requirements
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
HEXFET?TRANSISTORS 800V, N-CHANNEL
|
International Rectifier
|
| IRFAE30 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
HEXFET?TRANSISTORS 800V, N-CHANNEL
|
IRF[International Rectifier]
|
| IRFF310 2476 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
From old datasheet system
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
|
IRF[International Rectifier]
|
| IRFE9210 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
HEXFET?TRANSISTORS
|
IRF[International Rectifier]
|
