PART |
Description |
Maker |
D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | TO-202 TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 2A I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 6A条一(c)| TO - 220AB现有
|
Vishay Intertechnology, Inc.
|
SLA4340 |
PNP NPN Darlington Transistor (H-Hridge)(PNP NPN达林顿晶体管H桥)) 4 A, 60 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR PNP NPN Darlington H-bridge
|
Sanken Electric Co., Ltd. SANKEN[Sanken electric]
|
FJPF9020 FJPF9020TU |
Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Darlington Transistor NPN Epitaxial Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁| 10A条一(c)|3 TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
KSB1149 KSB1149OS KSB1149OSTU KSB1149YS KSB1149YST |
PNP Silicon Darlington Transistor PNP Epitaxial Silicon Transistor Low Collector Saturation Voltage Built-in Damper Diode at E-C
|
FAIRCHILD[Fairchild Semiconductor]
|
CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE. TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
FMMT734 FMMT734TA |
Discrete - Bipolar Transistors - Darlington Transistors “SUPER SOT SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR
|
Diodes Incorporated
|
2SC4342M 2SC4342-K-AZ |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|进步党| 100V的五(巴西)总裁| 3A条一(c)|26 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126
|
NEC, Corp.
|
MPSA63 MPSA64 MPSA62 |
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE DARLINGTON TRANSISTOR)
|
KEC[KEC(Korea Electronics)]
|