PART |
Description |
Maker |
SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package From old datasheet system
|
Siemens Semiconductor G... SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
SFH4552 SFH495P Q62702-P5054 Q62703-Q7891 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
SFH402-3 Q62702-P96 SFH401 Q62702-P784 Q62702-P786 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter From old datasheet system
|
Siemens Semiconductor G... http:// SIEMENS[Siemens Semiconductor Group] 红外LED
|
LD271 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor Group
|
LD271LH LD271 LD271H LD271L |
INFRARD EMITTER GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group SIEMENS[Siemens Semiconductor Group]
|
CF750 Q62702-F1391 |
From old datasheet system GaAs MMIC (Biased Dual Gate GaAs FET) 砷化镓微波单片集成电路(偏置双门砷化镓场效应管)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
TG2213S |
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
GN04042N |
GaAs device - GaAs MMICs - Switch GaAs设备-砷化镓微波集成电开
|
Infineon Technologies AG Panasonic
|
FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET L-Band Medium & High Power GaAs FET
|
FUJITSU LTD EUDYNA[Eudyna Devices Inc]
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|