| PART |
Description |
Maker |
| AS6C3216 AS6C3216-55TIN |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
| MC-222244AF9-B85X-BT3 MC-222244A-X |
MCP(32M-bit flash memory 4M-bit Low Power SRAM)
|
NEC
|
| MC-222252AF9-B85X-BT3 MC-222252A-X |
MCP(32M-bit flash memory 4M-bit Low Power SRAM)
|
NEC
|
| KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| LRS1382 |
STACKED CHIP 32M FLASH AND 8M SRAM
|
Sharp Electrionic Components
|
| LRS1337 |
Stacked Chip 32M Flash Memory and 4M SRAM
|
SHARP[Sharp Electrionic Components]
|
| UPD44321361GF-A75 UPD44321181 UPD44321181GF-A75 |
32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
|
NEC[NEC]
|
| LRS1383H |
STACKED CHIP 32M (X 16) BOOT BLOCK FLASH AND 8M (X 16) SRAM
|
Sharp Electrionic Components
|
| EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM
SRAM MCP
SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3
15ns; 3.3V power supply; 128K x 24 SRAM
|
Electronic Theatre Controls, Inc.
White Electronic Designs
|
| M372F3200DJ3-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V 32M × 72配置，带ECC DRAM的内存使6Mx4K
|
Samsung Semiconductor Co., Ltd.
|
| HYS64V32300GU HYS72V32300GU |
3.3 V 32M × 64-Bit SDRAM Module(3.3 V 32M × 64同步动态RAM模块)
3.3 V 32M × 72-Bit SDRAM Module(3.3 V 32M × 72同步动态RAM模块)
|
SIEMENS AG
|
| KMM53232004BV |
32M x 32 DRAM SIMM(32M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
