| PART |
Description |
Maker |
| R2066 |
PHOTOMULTlPLlER TUBE
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| R6091 |
PHOTOMULTlPLlER TUBE
|
HAMAMATSU[Hamamatsu Corporation]
|
| R6834 |
PHOTOMULTlPLlER TUBE
|
HAMAMATSU[Hamamatsu Corporation]
|
| R7446P R7446 |
PHOTOMULTlPLlER TUBES
|
Hamamatsu Corporation
|
| HM2101B |
High power MOS tube, IGBT tube gate driver chip
|
Shenzhen Huazhimei Semi...
|
| XP2206 |
A tube for hot environment, 10-stage, 51mm (2) tube
|
List of Unclassifed Manufacturers
|
| R636-10 R758-10 R636-10-15 |
UV to Near IR (R636?0:185 to 930 nm, R758?0:160 to 930nm) Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type
PHOTOMULTlPLlER TUBES
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
| 8040P1S20M050 8040P1S20M020 803000S20M050 803001P0 |
Prog Solid-State Temp Sensor, -40C to 85C, 5-TO-220, TUBE
1.5A Dual MOSFET Drvr, td Match, 0C to 70C, 8-PDIP, TUBE
1.5A DUAL MOSFET DRVR, TD MATCH, -40C to 125C, 8-SOIC 150mil, TUBE
1.5A Sngl 30V MOSFET Drvr, N-Inv, -40C to 85C, 8-CERDIP 300mil, TUBE 铅M12 3WAY 5.0
LEAD M12 4WAY 5.0M 铅M12 4.0
1.5A Dual MOSFET Drvr, -40C to 85C, 8-MSOP, TUBE 铅M12 3WAY 5.0
LEAD M12 4WAY 2.0M 铅M12 400
1.5A Dual MOSFET Drvr, td Match, -40C to 125C, 8-PDIP, TUBE 铅M12 3WAY 200
LEAD M12 4WAY 5.0M 铅M12 45.0
LEAD M12 3WAY 2.0M 铅M12 3WAY 200
|
Molex, Inc.
Ecliptek, Corp.
Samsung Semiconductor Co., Ltd.
THAT, Corp.
TE Connectivity, Ltd.
Rochester Electronics, LLC
|
| 2SA1721 2SA172107 |
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
| 2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
| P4C164L-25CC P4C164L-25CM P4C164-25CC P4C164-25CM |
1.5A Dual High-Speed Power MOSFET Drivers, -40C to 125C, 8-SOIC 150mil, T/R
1.5A Dual MOSFET Driver, -40C to 125C, 8-MSOP, TUBE
1.5A MOSFET Drvr W/Boost, Inv, -55C to 125C, 8-CERDIP 300mil, TUBE
1.5A MOSFET Drvr W/Boost, N-Inv, -55C to 125C, 8-CERDIP 300mil, TUBE
1.5A MOSFET Drvr W/Boost, N-Inv, 0C to 70C, 8-PDIP, TUBE
16 Bit Analog Processor, 0C to 70C, 16-SOIC 300mil, T/R
16 Bit Analog Processor, -25C to 85C, 16-CERDIP, TUBE
Precision Analog Front End, 0C to 70C, 24-SOIC 300mil, TUBE
1.5A DUAL MOSFET DRVR, TD MATCH, -40C to 125C, 8-SOIC 150mil, T/R
1.5A Dual MOSFET Drvr, td Match, -40C to 85C, 8-SOIC 150mil, T/R
1.5A DUAL MOSFET DRVR, -40C to 85C, 8-DFN, T/R
1.5A Dual MOSFET Drvr, td Match, -55C to 125C, 8-CERDIP 300mil, TUBE
30V N-Channel PowerTrench MOSFET
1.2A Quad MOSFET Drvr, AND I/P, 0C to 70C, 14-PDIP, TUBE x8的SRAM
x8 SRAM x8的SRAM
|
MOSFETs
Infineon Technologies AG
|
|
