| PART |
Description |
Maker |
| MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
| RF5110 RF5110PCBA |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| RF5110G |
3V GSM POWER AMPLIFIER 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
RF Micro Devices, Inc.
|
| MRF5S9080NBR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| AWT6172RM33P8 AWT6172RM33P9 AWT6172HM33P8 AWT6172H |
GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| PCF5077T |
Power amplifier controller for GSM and PCN systems
|
NXP Semiconductors
|
| PCF5078 PCF5078T |
Power amplifier controller for GSM and PCN systems
|
NXP Semiconductors
|
| AP137-501 |
Quad-Band GSM Power Amplifier Module
|
Skyworks Solutions Inc.
|
| AWT6168R |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS
|
| MRFIC0970 |
From old datasheet system
3.2V GSM GaAs Integrated Power Amplifier
|
Motorola
|
| PF01410 PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
