| PART |
Description |
Maker |
| Q68000-A9124 CGY94 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CGY2014TT |
GSM/DCS/PCS power amplifier(GSM/DCS/PCS 功率放大
|
Philips Semiconductors
|
| RF2173PCBA-41X RF21731 |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| PBL40305 |
Multiband GSM Power Amplifier
|
ERICSSON[Ericsson]
|
| MRF18085AL |
1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| AWT6155 AWT6155RM37P8 AWT6155RM37P9 |
Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| AWT6223R AWT6223RM26P8 AWT6223RM26P9 |
WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| AWT6168R |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS
|
| TQM7M4007 |
Quad-Band GSM / GPRS Power Amplifier Module
|
TriQuint Semiconductor
|
| PF0140 |
MOSFET POWER AMPLIFIER MODULE FOR GSM HANDY PHONE
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| PF01410 PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| TQM7M5003 |
Quad-Band GSM/EDGE Polar Power Amplifier Module
|
TriQuint Semiconductor
|
