| PART |
Description |
Maker |
| RF5110G RF5110GPCBA-410 |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| AWT6172RM33P8 AWT6172RM33P9 AWT6172HM33P8 AWT6172H |
GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| PCF5078 PCF5078T |
Power amplifier controller for GSM and PCN systems
|
NXP Semiconductors
|
| AWT6155 AWT6155RM37P8 AWT6155RM37P9 |
Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
| TQM7M4007 |
Quad-Band GSM / GPRS Power Amplifier Module
|
TriQuint Semiconductor
|
| TQM7M5005H |
GSM/EDGE Multi-mode Power Amplifier Module
|
TriQuint Semiconductor
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| SKY77336 |
Power Amplifier Module for Quad-Band GSM/GPRS/EDGE
|
Skyworks Solutions Inc.
|
