| PART |
Description |
Maker |
| RFP30N06LE RF1S30N06LE RF1S30N06LESM |
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
|
Fairchild Semiconductor
HARRIS[Harris Corporation]
|
| STD12NE06L STD12NE06L-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 12A条（丁）|51AA
N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET
N-CHANNEL POWER MOSFET
|
California Eastern Laboratories, Inc.
STMicroelectronics
ST Microelectronics
|
| IRFV460 IRFV460-15 |
Simple Drive Requirements
REPETITIVE AVALANCHE RATED AND dv/dt RATED
500V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
|
International Rectifier
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| STD12NF06-1 STD12NF06T4 STD12NF06 |
N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET
N-channel 60V - 0.08ヘ - 12A - DPAK - IPAK STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| HUF76407P3 |
12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| RF1K49086 |
3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A, 30V, AVALANCHE RATED, DUAL N-CHANNEL LITTLEFET⒙ ENHANCEMENT MODE POWER MOSFET
3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFETEnhancement Mode Power MOSFET
|
Fairchild Semiconductor Corporation
|
| SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GX |
SIPMOS? Power Transistor Features N channel Enhancement mode Avalanche rated
SIPMOSò Power Transistor Features N channel Enhancement mode Avalanche rated
7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Infineon Technologies AG
|
| BUZ104SL Q67040-S4006-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| JANTXV2N7224 JANTX2N7224 2N7224 IRFM150 |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管（之HEXFET晶体管）
REPETITIVE AVALANCHE RATED AND dv/dt RATED
HEXFET? TRANSISTOR
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BSL303SPE |
Avalanche rated
|
Infineon Technologies A...
|
