| PART |
Description |
Maker |
| HMC490LP5 |
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER/ 12 - 16 GHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 |
4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MITEQ, Inc.
MITEQ INC
|
| FZT717 FZT717TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
SOT223 PNP medium power transistor
|
Diodes Incorporated
|
| ZXTN25020BFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V, SOT23, NPN medium power transistor
|
Diodes Incorporated
|
| ZXTN25012EFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
12V, SOT23, NPN medium power transistor
|
Diodes Incorporated
|
| 2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
HIGH SPEED MEDIUM POWER NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
HIGH SPEED/ MEDIUM POWER/ NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
Supercapacitor; Capacitance:0.68F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
|
Central Semiconductor Corp
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| DXT2012P5 DXT2012P5-13 DXT2012P5-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
60V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| 2N3209DCSM |
Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型双PNP晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED/ MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| ZXT1053AK-15 ZXT1053AKTC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR
|
Diodes Incorporated
|
| CSM2-17 |
Low Cost High IP3 Mixer
|
Tyco Electronics
|
| CSM1-13 |
Low Cost High IP3 Mixer
|
Tyco Electronics
|
| 2N2894DCSM |
DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型PNP晶体管（高可靠性、陶瓷表贴封装）) 高速中功率开关晶体管进步党在全封闭六窑业表面贴装封装，高可靠性的应用（高速，中等功率，开关型进步党晶体管（高可靠性，陶瓷表贴封装））
|
SemeLAB
SEME-LAB[Seme LAB]
Lumex, Inc.
|
