| PART |
Description |
Maker |
| SPD506 SPD502 SPD503 SPD504 SPD505 |
5 AMPS 200 - 600 VOLTS 40 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR951E |
60 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SOLID STATE DEVICES INC
|
| 1N6687US 1N6686 1N6686US 1N6687 |
20 AMPS 100 - 200 VOLTS 40 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR620CT SDR622CT_CAP6 SDR620CT_CAP6 SDR621CT_CAP6 |
40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST COMMOM CATHODE CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR622CT/CAP6 SDR620CT/CAP6 SDR621CT/CAP6 |
40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST COMMOM CATHODE CENTERTAP RECTIFIER 80 A, 200 V, SILICON, RECTIFIER DIODE
40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST COMMOM CATHODE CENTERTAP RECTIFIER 20 A, 100 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| 2N6071A 2N6075B 2N6071 2N6071B 2N6073 2N6073A 2N60 |
SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS
Leaded Thyristor TRIAC
|
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| SDR4432 SDR4405 SDR4406 SDR4407 SDR4410 SDR4411 SD |
10 AMPS 50 - 300 VOLTS 40 nsec HYPER FAST RECTIFIER
|
http://
SSDI[Solid States Devices, Inc]
|
| MTW32N20E MTW32N20E-D |
Power MOSFET 32 Amps, 200 Volts N-Channel TO-247
Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET)
|
ON Semiconductor
|
| SDR955_3 SDR953_3 SDR953-3 SDR954_3 |
50 AMPS 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR2UF2.0SMS SDR2UF1.8 SDR2UF1.8SMS SDR2UF2.0 |
2 AMPS 1800 - 2000 VOLTS 70 nsec ULTRA FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
