PART |
Description |
Maker |
SPP08P06P09 SPP08P06PG |
8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB P-Channel Enhancement mode Avalanche rated dv/dt rated
|
Infineon Technologies AG
|
BUZ111SL Q67040-S4003-A2 BUZ111 |
From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
|
SIEMENS[Siemens Semiconductor Group]
|
IRFV460 IRFV460-15 |
Simple Drive Requirements REPETITIVE AVALANCHE RATED AND dv/dt RATED 500V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
|
International Rectifier
|
BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature) SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
BUZ111 BUZ111S Q67040-S4003-A2 |
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BUZ103SL Q67040-S4008-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) 28 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB High Speed CMOS Logic 12-Stage Binary Counter 16-PDIP -55 to 125 SIPMOS功率晶体管(N通道增强模式的逻辑电平雪崩额定dv / dt的评价) SIPMOS ? Power Transistor
|
SIEMENS AG Infineon Siemens Semiconductor Group
|
TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system MOS Field Effect Transistor N-CHANNEL MOS FET 5-PIN 2 CIRCUITS Silicon transistor
|
NEC Corp. NEC[NEC]
|
BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
|
UPA1873 UPA1873GR-9JG UPA1873GR-9JG-E1 UPA1873GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开 N-channel enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开 From old datasheet system N-channel MOS type field effect transistor
|
NEC, Corp. NEC[NEC]
|
UPA653TT UPA653TT-E1 UPA653TT-E2 |
P-channel enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|