| PART |
Description |
Maker |
| FQB3N25 FQI3N25 FQI3N25TU |
250V N-Channel QFET
250 N-Channel MOSFET
250V N-Channel MOSFET 2.8 A, 250 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| SUP75N04-05L SUB75N04-05L |
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 40V的五（巴西）直| 75A条（丁）| TO - 220AB现有
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
N-Channel Enhancement-Mode Transistors, Logic Level
|
Honeywell International, Inc.
Vishay
|
| FQA34N25 |
250V N-Channel MOSFET 34 A, 250 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFM224B IRFM224BL99Z |
920 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
250V N-Channel MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP254B |
250V N-Channel MOSFET 25 A, 250 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2SK2099-01L 2SK2099-01S |
N-channel MOS-FET 6 A, 250 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| CPC3703CTR CPC3703 CPC3703C |
N-Channel Depletion-Mode Vertical DMOS FETs
0.36 A, 250 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Clare, Inc.
CLARE INC
|
| SI7190DP-T1-GE3 |
N-Channel 250-V (D-S) MOSFET
|
Vishay Siliconix
|
| SI7434DP06 |
N-Channel 250-V (D-S) MOSFET
|
Vishay Siliconix
|
| SUD17N25-165 |
N-Channel 250 V (D-S) 175 °C MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
|
