| PART |
Description |
Maker |
| 1N5271 1N5230 1N5256 1N5248 1N5223 1N5267 1N5272 1 |
Pd=500mW, Vz=87V zener diode
Pd=500mW, Vz=27V zener diode
Pd=500mW, Vz=22V zener diode
MVSTBW 2,5/ 3-ST BK
MSTBW 2.5/12-G
500 mW Zener Diode 2.4 to 200 Volts
Pd=500mW, Vz=36V zener diode
Pd=500mW, Vz=19V zener diode
|
MCC
Micro Commercial Compon...
Micro Commercial Components Corp.
http://
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| SLD303V |
500mW High Power Laser Diode
From old datasheet system
|
http://
Sony Corporation
|
| 1N5756D 1N5749D 1N5739D 1N5728C 1N5742C 1N5747D 1N |
Diode Zener Single 68V 1% 500mW 2-Pin DO-35
Diode Zener Single 36V 1% 500mW 2-Pin DO-35
Diode Zener Single 13V 1% 500mW 2-Pin DO-35
Diode Zener Single 4.7V 2% 500mW 2-Pin DO-35
Diode Zener Single 18V 2% 500mW 2-Pin DO-35
Diode Zener Single 30V 1% 500mW 2-Pin DO-35
ZENER VOLTAGE 4.7 TO 75V
|
New Jersey Semiconductors
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| BZT55B62 BZT55B8V2L1 BZT55B3V0 |
500mW, 2% Tolerance SMD Zener Diode
8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
500mW, 2% Tolerance SMD Zener Diode
|
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co...
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| 1A440 |
VCSEL(Vertical Cavity Surface-Emitting) Laser Diode(用于光纤通道，吉位以太网，ATM的垂直空腔表面辐射激光二极管) VCSEL（垂直腔表面发射）激光二极管（用于光纤通道，吉位以太网，自动取款机的垂直空腔表面辐射激光二极管
VCSEL Laser Diode(Datacom General Purpose)
VCSEL Laser Diode(Datacom/ General Purpose)
VCSEL Laser Diode(Datacom, General Purpose) VCSEL激光二极管（数据通信，通用
|
Mitel Networks Corporat...
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
