| PART |
Description |
Maker |
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| MP2B5038 MP2B5085 MP2B5052 MP2B5150 |
A multi chip power device for a Multi-Oscillated Current Resonant type Converter
|
Fuji Electric
|
| TPCF8B0107 |
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
Toshiba Semiconductor
|
| HN7G02FU |
TOSHIBA Multi Chip Discrete Device
|
TOSHIBA[Toshiba Semiconductor]
|
| ISD1720 |
Multi-Message Single-Chip Voice Record & Playback Device
|
Winbond
|
| HN2E01F07 HN2E01F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| HN4C05JU |
MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| SYS32256LK-30 SYS32256ZK-30 SYS32256LKLI-30 SYS322 |
256K X 32 MULTI DEVICE SRAM MODULE, 30 ns, SMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 30 ns, ZMA64 PLASTIC, ZIP-64
|
TE Connectivity, Ltd.
|
| TH50VSF3583AASB |
(TH50VSF3582AASB / TH50VSF3583AASB) MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| EMS256K8BMO2-55M EMS256K8BMO2-55D EMS256K8BMO6-55I |
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, CDMA32
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, PDMA32
|
OKI SEMICONDUCTOR CO., LTD.
|
| WS128K32V-35HS WS128K32V-35HC |
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, HIP66
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
|
