| PART |
Description |
Maker |
| SSR2060CTM |
40 AMPS 60 VOLTS POSITIVE CENTERTAP SCHOTTKY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| CSHD3-100 |
SCHOTTKY RECTIFIER SINGLE/ 3.0 AMPS/ 100 VOLTS HIGH VOLTAGE
SCHOTTKY RECTIFIER SINGLE, 3.0 AMPS, 100 VOLTS HIGH VOLTAGE 3 A, 100 V, SILICON, RECTIFIER DIODE
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| SSR6080D5 SSR6060D5 SSR60100D5 SH0048A |
SCHOTTKY RECTIFIERS 60 AMPS 60, 80 and 100 VOLTS
|
Solid States Devices, Inc
|
| NTP52N10 NTP52N10_D NTP52N10D NTP52N10/D |
Power MOSFET 52 Amps, 100 Volts
Power MOSFET 52 Amps 100 Volts
|
ONSEMI[ON Semiconductor]
|
| UT12N10 UT12N10G-TN3-R UT12N10L-TN3-R |
12 Amps, 100 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| MTP27N10E-D |
Power MOSFET 27 Amps, 100 Volts N-Channel TO-220
|
ON Semiconductor
|
| SSR2010CTZ SSR2008CTM SSR2008CTZ SSR2009CTM SSR200 |
20 AMPS 100 VOLTS CENTER TAP SCHOTTKY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| 1N6687US 1N6686 1N6686US 1N6687 |
20 AMPS 100 - 200 VOLTS 40 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| MTP10N10EL-D |
Power MOSFET 10 Amps, 100 Volts, Logic Level N-Channel TO-220
|
ON Semiconductor
|
| SFS2540 SFS2510 SFS2520 SFS2525 SFS2530 |
25 AMPS 100 ─ 400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER
25 AMPS 100 Α 400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| NTB13N10-D |
Power MOSFET 13 Amps, 100 Volts N-Channel Enhancement Mode D 2 PAK
|
ON Semiconductor
|
