PART |
Description |
Maker |
STB50NE10L 6036 |
N-Channel 100V-0.020Ω-50A-D2PAK STripFETTM Power MOSFET(N沟道功率MOSFET) N - CHANNEL 100V - 0.020ohm - 50A - D2PAK STripFET POWER MOSFET From old datasheet system
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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FRK160R FRK160D FRK160H FN3222 |
50A/ 100V/ 0.040 Ohm/ Rad Hard/ N-Channel Power MOSFETs 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
SAB82538H-10 SAF82538H-10 |
RECTIFIER BRIDGE 1.5A 50V 50A-ifsm 1.1V-vf 10uA-ir DFS 1.5K/REEL-13 RECTIFIER BRIDGE 1.5A 100V 50A-ifsm 1.1V-vf 10uA-ir DFM 50/TUBE ICs for Communications 8 CHANNEL(S), 10M bps, SERIAL COMM CONTROLLER, PQFP16
|
Infineon Technologies AG
|
STB40NF10T4 |
N-CHANNEL 100V - 0.024 OHM - 50A D2PAK LOW GATE CHARGE STRIPFET II MOSFET
|
ST Microelectronics
|
STB50NE10T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 50A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 50A条(丁)|63AB
|
STMicroelectronics N.V.
|
HUF76121S3S HUF76121P3 FN4392 |
47A/ 30V/ 0.021 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
UPD75P0016GB-3BS-MTX |
RECTIFIER BRIDGE 1.5A 100V 50A-ifsm 1V-vf 5uA-ir WOG 1K/BULK
|
NEC Corp.
|
STS7NF30L 6084 |
N - CHANNEL 30V - 0.021 - 7A SO-8 STripFET TM POWER MOSFET From old datasheet system
|
STMicro
|
FDD3672 FDD3672NL |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
STL6N3LLH6 |
N-channel 30 V, 0.021 Ohm typ., 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in PowerFLAT 2x2 package
|
ST Microelectronics
|
IRFG110 JANTX2N7334 JANTX2N7334N JANTXV2N7334 JANT |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | DIP POWER MOSFET THRU-HOLE (MO-036AB) 100V Quad N-Channel MOSFET in a MO-036AB package 100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|