| PART |
Description |
Maker |
| MB3891 MB3891PFV |
Power Management IC for GSM Mobile Phone
|
Fujitsu Limited
Fujitsu Component Limited.
|
| MF1157V-2 |
FOR E-GSM MOBILE TELEPHONE, Tx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| CGY59 Q68000-A8887 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN DECT GSM in 2.7V to 6V systems)
From old datasheet system
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| PCF5081 PCF5082 |
GSM baseband processors for digital mobile cellular radio
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AWT6155 AWT6155RM37P8 AWT6155RM37P9 |
Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| AWT6168R |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS
|
| AWT6280RM11P8 AWT6280RM11P9 |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| TQM7M5008 |
Quad-Band GSM/EDGE Polar Power Amplifier Module
|
TriQuint Semiconductor
|
| PF01410 PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| SKY77365 |
Power Amplifier Module for Quad-Band GSM / GPRS / EDGE
|
Skyworks Solutions Inc.
|
