| PART |
Description |
Maker |
| STP140NF75 B140NF75 P140NF75 STB140NF75 STB140NF75 |
N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET II POWER MOSFET
N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET
120 A, 75 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB
|
STMICROELECTRONICS[STMicroelectronics]
|
| FDB045AN08A0 FDB045AN08NBSP FDB045AN08 |
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m?/a>
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.5mOhm
From old datasheet system
N-Channel UltraFET® Trench MOSFET
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.5m
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз 19 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| STD45NF75 STD45NF75T4 |
N-CHANNEL 75V - 0.018 OHM -40A DPAK STRIPFET II POWER MOSFET
|
ST Microelectronics
|
| LPM2M120-030 LPM2M250-006 |
120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
250 A, 60 V, 0.004 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
SENSITRON SEMICONDUCTOR
|
| IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五（巴西）直| 100号A（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| MTP23P06V ON2569 |
TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| 2SK2753-01 |
N-channel MOS-FET 50 A, 120 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| BUK6E2R0-30C |
N-channel TrenchMOS intermediate level FET 120 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
NXP Semiconductors N.V.
|
| SQM120N10-09-GE3 |
120 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
| PSMN3R5-80PS |
N-channel 80 V, 3.5 m standard level MOSFET in TO-220 120 A, 80 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| FDP75N08A |
N-Channel UniFETTM MOSFET 75V, 75A, 11m
75V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF3808L IRF3808S RF3808S |
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
|
IRF[International Rectifier]
International Rectifier, Corp.
|
|
