| PART |
Description |
Maker |
| STQ-1016 |
250 - 1000 MHz Direct Quadrature Modulator
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| STQ-1016Z STQ-1016 |
250 - 1000 MHz Direct Quadrature Modulator
|
SIRENZA[SIRENZA MICRODEVICES]
|
| 2661000701 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| 2661000301 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| 2661000101 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| TOAT-3610 |
Digital Step Attenuator, 50ohm TTL Control, Pin Diode 10 to 1000 MHz 10 MHz - 1000 MHz RF/MICROWAVE VARIABLE ATTENUATOR
|
Mini-Circuits
|
| SMA18-1 A18-1 A18-1_1 CA18-1 A18-11 |
10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Cascadable Amplifier 10 to 1000 MHz
|
MACOM[Tyco Electronics]
|
| EMDC-10-1-75TR EMDC-10-1-75 |
5 MHz - 1000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 1.9 dB INSERTION LOSS-MAX
E-Series Coupler 5 - 1000 MHz
|
MACOM[Tyco Electronics]
|
| HMC399MS8E |
HIGH IP3 GaAs MMIC MIXER, 700 - 1000 MHz
700 MHz - 1000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 10 dB CONVERSION LOSS-MAX
|
Hittite Microwave Corporation
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
