PART |
Description |
Maker |
STW12NC60 7175 |
N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFET From old datasheet system N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFET
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ST Microelectronics STMicroelectronics
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HGTG12N60D1 HGTG12N60D1D |
12A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
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INTERSIL[Intersil Corporation]
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HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N6 |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
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Fairchild Semiconductor
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IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
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IRF[International Rectifier]
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1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N36 |
12A silicon power rectifier, 200V 12A silicon power rectifier, 1000V Military Silicon Power Rectifier 12A silicon power rectifier, 400V 12A silicon power rectifier, 600V 12A silicon power rectifier, 800V
|
MICROSEMI[Microsemi Corporation] http://
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IXTP15N30MB IXTP15N30MA IXTH12N45MA IXTH15N35MB IX |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 23A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 31A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 42A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 15A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 42A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 35A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 12A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 67A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 24A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 20A条(丁)|的Z -委员
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Ricoh Co., Ltd.
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FDP12N60NZ FDPF12N60NZ |
N-Channel UniFETTM II MOSFET 600V, 12A, 650m N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m?
|
Fairchild Semiconductor
|
IRG4BC30UD IRG4BC30UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
HST12 |
TRIAC 600V,12A
|
Hi-Sincerity Mocroelectronics
|
RJK60S3DPD-00J2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
IRGPC30U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
IRGBC30U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=12A)
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IRF[International Rectifier]
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