| PART |
Description |
Maker |
| SW2N60 |
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. 这功率MOSFET生产CHMC先进VDMOS器件SAMWIN技术
From old datasheet system
|
Samwin
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| STP9437 |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4438 |
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST7400 |
ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN1810 |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
|
International Rectifier
|
| IRFB4710PBF IRFS4710PBF IRFSL4710PBF IRFS4710TRR I |
High frequency DC-DC converters
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
| SPM4M024-100 SPC8M075-006 SPC8M045-010 SPC8M030-02 |
6 A, 1000 V, 2 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 130 A, 60 V, 0.006 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 40 A, 600 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 350 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 45 A, 100 V, 0.03 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 300 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sensitron Semiconductor
http://
|
| IRFUC20 IRFRC20 IRFUC20PBF |
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A)
(IRFRC20 / IRFUC20) Power MOSFET
|
IRF[International Rectifier]
|
| IRLS3034PBF IRLSL3034PBF IRLS3034TRLPBF IRLS3034PB |
HEXFET Power MOSFET
195 A, 40 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
HEXFETPower MOSFET
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
|
