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T431616B-20S - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

T431616B-20S_1320922.PDF Datasheet


Part No.	T431616B-20S T431616B T431616B-10C T431616B-10S T431616B-20C
Description	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
File Size	564.16K / 31 Page
Maker	TMT[Taiwan Memory Technology]
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Full text search : 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Product Description search : 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Related Part Number

PART	Description	Maker
T431616D T431616E	(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM	TMT
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K4S161622D K4S161622D-TC/L10 K4S161622D-TC/L55 K4S	512K x 16Bit x 2 Banks Synchronous DRAM	Samsung Electronic Samsung semiconductor
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K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163	16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM	Samsung semiconductor
W986432DH	SDRAM 2Mx32 512K ′ 4 BANKS ′ 32 BITS SDRAM	Winbond Electronics
W981616BH	SDRAM 1Mx16 512K ′ 2 BANKS ′ 16 BITS SDRAM	Winbond Electronics
T4312816B T4312816B-6SG T4312816B-7S T4312816B-7SG	8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM	Taiwan Memory Technology
K4M281633H K4M281633H-RF1H K4M281633H-RF1L K4M2816	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA	SAMSUNG SEMICONDUCTOR CO. LTD.

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