| PART |
Description |
Maker |
| TC58FVM7T2 TC58FVM7T2AFT65 |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY 128兆位,600 x 8 8米16位）的CMOS闪存
|
Toshiba Semiconductor
Toshiba, Corp.
|
| EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory
|
| EDL5132CBMA-10-E EDL5132CBMA |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
| TC58FVB321 TC58FVXB-70 TC58FVXB-10 TC58FVT321-70 |
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32兆位分 200万6位）的CMOS闪存
CAT5E PATCH CORD 100MHZ 7 FOOT BLACK 32兆位分 200万6位）的CMOS闪存
32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| IS42S32200E-6TL IS42S32200E-6TLI IS45S32200E-6BLA1 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc
|
| IS45S16400C1-7TA1 IS45S16400C1-7TLA1 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS42S1640008 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42VS16400C1-12T IS42VS16400C1-12TI IS42VS16400C1 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
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