| PART |
Description |
Maker |
| TC5832DC |
32 MBIT (4M x 8BIT) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58DVM82A1FT00 |
256-MBIT (32M x 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58A040F |
4 MBIT (4M x 1BITS) CMOS AUDIO NAND E2PROM 4兆比特（4米1BITS）的CMOS NAND型E2PROM的音
|
Toshiba Corporation
Toshiba, Corp.
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC5832DC |
32 MBIT (4M x 8BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58NVG6T2FTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| TH58V128FT |
128Mbit (16M x 8bit) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TH58100FT |
1-GBIT (128M x 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
| CAT24WC32LE1.8TE13B CAT24WC32PE1.8TE13B CAT24WC32W |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
EEPROM
BCD Semiconductor Manufacturing, Ltd.
Vishay Intertechnology, Inc.
Samtec, Inc.
|
| CAT93C5711PI-45TE13 CAT93C5621PI-45TE13 CAT93C4621 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
BCD Semiconductor Manufacturing, Ltd.
Atmel, Corp.
Amphenol, Corp.
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| TC58NS512ADC |
512 MBit CMOS NAND EPROM
|
Toshiba
|
