| PART |
Description |
Maker |
| AT45DB321B AT45DB321B-CC AT45DB321B-CI AT45DB321B- |
From old datasheet system
32M bit, 2.7-Volt Only Serial Interface Flash with two 528-Byte SRAM Buffers
32-megabit 2.7-volt Only DataFlash
|
ATMEL[ATMEL Corporation]
|
| 80C186EC 80C188EC 80L186EC 80L188EC 80C186EC20 80C |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS 16位高集成嵌入式处理器
CAPACITOR 4700UF 16V CAPACITOR 4700UF 16V; CAPACITANCE:4700UF; VOLTAGE RATING, DC:16V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:ZLH; TEMP, OP. MAX:105(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes
|
Intel Corp.
Intel, Corp.
|
| 13443 13443-01 |
CAPACITOR, ALEL, RADIAL, 390uF, -20%, 16V 电容器，阿莱勒，径向390uF20％，16V
CAPACITOR ALEL RADIAL 390uF -20% 16V
|
Vicor, Corp.
VICOR[Vicor Corporation]
|
| AT45DB642-TI AT45DB642-TC |
64-megabit 2.7-volt Only Dual-interface DataFlash
|
Atmel Corp.
|
| AT45DB642D-CNU AT45DB642D-TU |
64-megabit 2.7-volt Dual-interface DataFlash
|
Atmel Corp.
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| L8828-04 L8828-06 L8828-07 L8828-41 L8828-42 L8828 |
Infrared detector module with preamp
CW LASER DIODES
CAP 18PF 50V 1% C0G SMD-0402 BULK SN100
CAPACITOR 10PF 5% 50V COG 0402
CAP CER 680PF 25V X7R 0201
CAP CER 330PF 16V X7R 0201
CAP CER 220PF 16V X7R 0201
CAP CER 470PF 16V 10% X7R 0201
CAP CER 110PF 50V C0G 0402
CAP CER 100PF 16V 10% X7R 0201
CAP CER 100PF 25V X7R 0201
CAP 100PF 50V 5% C0G SMD-0402 TR-7-PA SN100
CAP CER 680PF 16V 10% X7R 0201
CABLE SMA PLUG-PLUG HF-.086 24,1 连续激光二极管
CABLE SMA PLUG-PLUG HF-.141 3,1 连续激光二极管
CAP CER 3300PF 16V X7R 0201 连续激光二极管
|
http://
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics K.K.
|
| ES25P80-75CC2R ES25P80-75CC2T ES25P80-75CG2R ES25P |
8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
|
http://
|
| ES25P40 |
4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
|
Excel Semiconductor Inc...
|
| S30MS01GP25TAW002 S30MS512P25TAW012 S30MS512P25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology
|
SPANSION[SPANSION]
|
| LC372100PM LC372100PM-10LV LC372100PM-20LV LC37210 |
CAP 10UF 16V 10% TANT SMD-6032-28 TR 2迈可262144字8位）掩模ROM内部时钟硅门
CAP 10UF 16V 10% TANT SMD-6032-28 TR-13 2迈可262144字8位）掩模ROM内部时钟硅门
CAP 10UF 16V 20% TANT SMD-3528-21 TR-13 2迈可262144字8位）掩模ROM内部时钟硅门
2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
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