| PART |
Description |
Maker |
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| THN6201U THN6201 THN6201E THN6201KF THN6201Z THN62 |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
| THN6301KF THN6301U THN6301S THN6301E THN6301Z |
SiGe NPN Transistor
|
AUK corp
|
| THN4301E THN4301U THN4301Z |
SiGe NPN Transistor
|
AUK corp
|
| THN420Z |
SiGe NPN Transistor
|
AUK corp
|
| THN6301 THN6301E THN6301KF THN6301S THN6301U THN63 |
NPN SiGe RF TRANSISTOR
|
Tachyonics CO,. LTD
|
| NESG2101M05-T1-A NESG2101M05 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2101M16-T3-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| BFP620FE6327 |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
|
INFINEON TECHNOLOGIES AG
|
| NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
| MCR01MZPJ5R6 MCR01MZPJ823 MCR01MZPJ620 NESG3033M14 |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
