PART |
Description |
Maker |
UPC2763TB-E3-A UPC2763TB |
3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
|
CEL[California Eastern Labs]
|
UPC2771TB UPC2771TB-E3-A |
3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
|
California Eastern Labs
|
UPC2762TB1 |
3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
|
NEC
|
UPC3210TB UPC3210TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
NEC[NEC]
|
NESG250134-T1-AZ NESG250134 NESG250134-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)
|
CEL[California Eastern Labs]
|
NE3508M04-T2B-A |
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET LEAD FREE, THIN, SUPER MINIMOLD PACKAGE-4
|
California Eastern Laboratories, Inc.
|
NE3508M04-T2-A |
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET LEAD FREE, SUPER MINIMOLD, M04, 4 PIN
|
California Eastern Laboratories, Inc.
|
2SC5012-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
Renesas Electronics Corporation
|
NESG250134-AZ NESG250134-EV09 NESG250134-T1-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE) 邻舍npn型硅锗射频晶体管介质输出功率AMPLIFIVATION00mW的)3针奥尔MINIMOLD34包)
|
Duracell California Eastern Laboratories, Inc.
|
NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|