| PART |
Description |
Maker |
| K9K2G0816QU0M |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
| HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM）的
|
Hitachi,Ltd.
|
| MX23L1654MC-20G |
16M-BIT Low Voltage, Serial MASK ROM with 50MHz SPI Bus Interface
|
MACRONIX INTERNATIONAL CO LTD
|
| K9E2G08B0M K9E2G08B0M-F K9E2G08B0M-FCB0 K9E2G08B0M |
256M x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
| K9E2G08U0M K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M-V |
256M x 8 Bits NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| EN27LN2G08 |
2 Gigabit (256M x 8), 3.3 V NAND Flash Memory
|
Eon Silicon Solution In...
|
| K9E2G08B0M-FIB0 K9E2G08B0M-Y K9E2G08B0M-YCB0 K9E2G |
256M x 8 Bits NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX23J12840TI-50G MX23J12840 MX23J12840TC-50 MX23J1 |
128M-BIT NAND INTERFACE XtraROMTM
|
MCNIX[Macronix International]
|
| MX23L6422 MX23L6422MC-11 MX23L6422MC-12 MX23L6422Y |
3.3 Volt 64M-BIT (4M x 16 / 2M x 32) Mask ROM with Page Mode 2M X 32 MASK PROM, 120 ns, PDSO86
|
Macronix International Co., Ltd.
|
| MX23L4000 MX23L4000MI-15 MX23L4000MI-20 MX23L4000T |
4M-BIT MASK ROM (8 BIT OUTPUT) 512K X 8 MASK PROM, 150 ns, PDSO32
OSCILLATOR 64.00MHZ SMD 512K X 8 MASK PROM, 150 ns, PDSO32
|
Macronix International Co., Ltd.
|
