| PART |
Description |
Maker |
| HYM71V32S755AT4M |
32Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 256MB 32Mx72 | 3.3 | | x18 | SDRAM的特别提款权-注册256MB的内
|
Omron Electronics, LLC
|
| HYM71V32D755HCT4 HYM71V32D755HCT4-8 HYM71V32D755HC |
32Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 256MB
|
Hynix Semiconductor
|
| HYS72D16500GR-7-A HYS72D32501GR-8-A |
256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 128MB (16Mx72) PC2100 1-bank
|
Infineon
|
| HYS72D64320GBR-7-B HYS72D32300GBR-7-B HYS72D64300G |
DDR SDRAM Modules - 512 MB (64Mx72) PC2700; 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank, FBGA based
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC3200 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC2700 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank available 2Q/04
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based
DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank, FBGA based
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank, FBGA based
|
Infineon
|
| HYMD132G725B4-H HYMD132G725B4-K HYMD132G725B4-L HY |
32Mx72|2.5V|M/K/H/L|x18|DDR SDRAM - Registered DIMM 256MB
Registered DDR SDRAM DIMM
|
Hynix Semiconductor
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 H |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块
144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块
256MB PC100 (2-2-2) 2-bank End-of-Life
SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
