| PART |
Description |
Maker |
| XM28C040PM-25 XM28C040P XM28C040P-15 XM28C040P-20 |
High Density 5 Volt Byte Alterable Nonvolatile Memory Array 高密5伏可变字节非易失性存储器阵列
|
XICOR[Xicor Inc.]
|
| IDT72V295 IDT72V2105 IDT72V2105L10PF IDT72V2105L15 |
128K x 18 SuperSync FIFO, 3.3V
3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 131,072 x 18 262,144 x 18
3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO?
|
IDT[Integrated Device Technology]
|
| AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash
EEPROM EEPROM
|
TE Connectivity, Ltd.
|
| IDT72V273L6PF IDT72V243 IDT72V223 IDT72V253 IDT72V |
3.3 VOLT HIGH-DENSITY SUPERSYNC NARROW BUS FIFO 2K X 18 OTHER FIFO, 6.5 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC NARROW BUS FIFO 4K X 18 OTHER FIFO, 10 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC NARROW BUS FIFO 3.3伏高密度SUPERSYNC窄总线先进先出
RECEPTACLE, EMI, BACKSHELL, 360DEG; Gender:Receptacle; Ways, No. of:1; Series:RJF TV RoHS Compliant: No
PLUG ASSEMBLY, 360DEG, EMI, BACKSHELL; Gender:Plug; Ways, No. of:1; Series:RJF TV RoHS Compliant: No
|
Integrated Device Technology, Inc.
Integrated Device Technolog...
Integrated Device Techn...
|
| IDT72V253 IDT72V253L10BC IDT72V253L10PF IDT72V253L |
3.3 VOLT HIGH-DENSITY SUPERSYNC NARROW BUS FIFO
|
IDT[Integrated Device Technology]
|
| IDT72V2113L7PFI IDT72V2103 IDT72V2103L10BC IDT72V2 |
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO
|
IDT[Integrated Device Technology]
|
| AT49LV4096A AT49BV4096A AT49LV4096A-70C5I |
256K X 16 FLASH 2.7V PROM, 70 ns, PBGA48
4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
4M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
|
ATMEL CORP
|
| AT49BV162A AT49BV162AT |
16M bit, 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash, Single Pane, Bottom Boot
16M bit, 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash, Single Pane, Top Boot
|
Atmel
|
| ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-10 |
3.3V In-System Programmable SuperFAST?High Density PLD
CRYSTAL 32.768KHZ 12.5PF SMD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
CRYSTAL 12.0 MHZ 20PF SMD
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 6 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP160
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP100
3.3V In-System Programmable SuperFASTHigh Density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ATMEGA48 ATMEGA168 ATMEGA88 |
4K byte self-programming Flash Program Memory, 512 byte SRAM, 256 Byte EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega48V).
16K Byte self-programming Flash Program Memory, 1K Byte SRAM, 512 Bytes EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega168V).
8K Byte self-programming Flash Program Memory, 1K Byte SRAM, 512 Bytes EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega88V).
|
Atmel
|
| SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE
FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
High Voltage,High Density Fast Recovery Rectifier(反向电压4000V，温55℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压6000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压12000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压2000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压10000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
| X28C010FI-20 X28C010FMB-15C7808 X28C010FMB-15C7619 |
CAP 6.8PF 100V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
Controller IC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Controller IC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500
5 Volt, Byte Alterable EEPROM 128K X 8 EEPROM 5V, 120 ns, CDIP32
CAP 6.8PF 100V .25 PF NP0(C0G) SMD-0603 TR-13 PLATED-NI/SN 128K X 8 EEPROM 5V, 250 ns, CDFP32
5 Volt, Byte Alterable EEPROM 128K X 8 EEPROM 5V, 250 ns, CPGA36
5 Volt, Byte Alterable EEPROM 128K X 8 EEPROM 5V, 200 ns, CDSO32
|
Intersil Corporation
PROM
Intersil, Corp.
|
|
