| PART |
Description |
Maker |
| HYB18L256160BC-7.5 HYB18L256160BF-7.5 HYB18L256160 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
|
Qimonda AG
http://
|
| HYB25L256160AC HYB25L256160AC-8 |
256-Mbit Mobile-RAM
|
Infineon Technologies A...
|
| HYB18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
|
Qimonda AG
|
| HYB18L512160BF-7.5 HYE18L512160BF-7.5 |
DRAMs for Mobile Applications 512-Mbit Mobile-RAM
|
http://
|
| CY7C1041DV33-10ZSXA CY7C1041DV33-10ZSXI CY7C1041DV |
4-Mbit (256 K ? 16) Static RAM
4-Mbit (256 K × 16) Static RAM
|
Cypress Semiconductor
|
| FM22L16-55-TG |
4-Mbit (256 K 16) F-RAM Memory
|
Cypress
|
| CY62138FV30LL-45BVXI CY62138FV30LL-45BVXIT CY62138 |
2-Mbit (256 K 8) Static RAM
|
Cypress
|
| AM42DL3244GB25IT AM42DL3234GB25IT AM42DL3224GB25IT |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位56亩16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| AM41LV3204MT10IT |
Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
|
Advanced Micro Devices, Inc.
|
| IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
