PART |
Description |
Maker |
PS21962-ST |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21962-T09 PS21962-AT PS21962-CT PS21962-T PS2196 |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21963-A |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21962-4S PS21962-4S09 |
Dual-In-Line Package Intelligent Power Module 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21963-4S PS21963-4S09 |
Dual-In-Line Package Intelligent Power Module 600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
APT6017JFLL |
POWER MOS 7 600V 31A 0.170 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
APT6010LLL APT6010B2LL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 54A 0.100 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT6021BFLL APT6021SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 POWER MOS 7 600V 29A 0.210 Ohm
|
Advanced Power Technology, Ltd.
|
APT60M60JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET POWER MOS 7 600V 70A 0.060 Ohm
|
Advanced Power Technology, Ltd.
|
SF0070BA03056S |
70.0 MHz Low-Loss Filter 6.0 MHz Bandwidth Part Number SF0070BA03056S 70 MHz Low Loss SAW Filters
|
ICST[Integrated Circuit Systems]
|
IRGSL4B60KD1 IRGS4B60KD1 IRGB4B60KD1 |
600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package 600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package 600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|